On July 6, 2010, AIXTRON announced that Hangzhou Silan Microelectronics will place orders for six AIXTRON 55x2′′ CRIUS ® II deposition systems in the second quarter of this year, which will be delivered from the end of this year to the beginning of next year, and will be delivered by AIXTRON. The local team is responsible for the installation and commissioning of its Hangzhou plant, which is used to mass produce ultra-bright blue/green GaN LEDs.
The new generation of CRIUS ® II systems has made breakthroughs, such as higher growth rates, higher growth furnace pressures, and doubled productivity. Mr. Jiang Zhongyong, the general manager of the company, said that he valued the advantages of this device in increasing the yield of nitride-based LEDs and met the requirements for process flexibility, uniform thickness of the growth layer, doping and composition. It is precisely because of the quality of the equipment, advanced CRIUS ® technology and AIXTRON can provide technical support to local customers, which ultimately prompted Hangzhou Silan to place orders.
AIXTRON Managing Director Tony Pearce said that the next-generation CRIUS ® II CCS system can provide customers with the fastest production speed, and the technology is proven by industry insiders to reduce maintenance time. Furthermore, CRIUS ® II will be combined with the ARGUS multi-channel pyrometer to provide real-time surface temperature measurement and analysis of the entire MOCVD growth surface in the CCS ® system by monitoring its temperature profile.
Figure: ARGUS system test obtained a temperature profile of a 200mm GaN/AlGaN/Si wafer. The red dot indicates the tray without the wafer, and the blue dot indicates the wafer area.
Hangzhou Silan Microelectronics Co., Ltd. is principally engaged in the development, manufacture and sale of integrated circuits, LED products and other electronic devices. The main products include digital audio ICs, video ICs, power management ICs, LED drivers, DC motor drives and more.
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