Shanghai, China, September 19, 2012-Cree, a market leader in the LED field, has announced the launch of its latest low-base-level dislocation (LBPD) 100 mm 4H silicon carbide epitaxial wafer. The total basal plane dislocation density of the epitaxial drift layer of this low basal plane dislocation material is less than 1cm-2, and the basal plane dislocation capacity causing Vf shift is less than 0.1cm-2. The launch of this new low-base-level dislocation material further reflects Cree's long-term continuous investment and innovation in silicon carbide material technology.
John Palmour, Chief Technology Officer of Cree Power Devices and Radio Frequency (RF), said: "The development of silicon carbide bipolar devices has long been constrained by the forward voltage attenuation caused by basal plane dislocations. This low-base plane dislocation material It can be used in high-voltage bipolar devices such as insulated gate bipolar transistors (IGBTs) and turn-off thyristors (GTOs), and increase the stability of these devices. This latest achievement helps to eliminate the hysteresis of high-power devices commercial Hinder. "
Silicon carbide is a high-performance semiconductor material that is widely used in the production of lighting, power devices, and communications devices, including light-emitting diodes (LEDs), power conversion devices, and radio frequency power transistors for wireless communications.
About CREE
Founded in 1987, Cree is a US listed company (1993, NASDAQ: CREE), a well-known manufacturer of LED epitaxy, chips, packaging, LED lighting solutions, compound semiconductor materials, power devices and radio frequency in the world Vendors and industry leaders. The advantages of Cree LED lighting products are reflected in the unique material technology and advanced white light technology in gallium nitride (GaN) and silicon carbide (SiC). It has more than 1,300 US patents and more than 2,900 international patents. Nearly 390 Chinese patents (including the authorized and pending patents) have kept Cree LED products at a world-leading level. Cree lighting-grade high-power LED has the advantages of high light efficiency, stable color point and long life. Cree provides customers with complete sets of LED lighting solutions while providing high-quality, highly reliable light-emitting device products. Cree silicon carbide metal oxide semiconductor field effect transistor switching device (MOSFETSwitch) has small on-resistance, stable temperature coefficient, low leakage current, short switching time, and zero reverse of Cree SiC Schottky Power Diode The recovery current and other characteristics make Cree silicon carbide power devices especially suitable for power electronic systems with high frequency, high efficiency, high power density and high reliability requirements.
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